Kingston 9905403-061.A00LF 2GB vs Kingston ACR26D4S9D8MD-16 16GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Kingston ACR26D4S9D8MD-16 16GB

需要考虑的原因
Kingston ACR26D4S9D8MD-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 57

左右 -50% 更低的延时
更快的读取速度，GB/s

14.2 6.8

测试中的平均数值
更快的写入速度，GB/s

9.2 5.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Kingston ACR26D4S9D8MD-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 38
读取速度，GB/s

6.8 14.2
写入速度，GB/s

5.5 9.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1244 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD824A.C16FBD 16GB

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G Skill Intl F3-1600C11-4GIS 4GB

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Micron Technology 8ATF1G64HZ-2G3A1 8GB

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Samsung M471A2K43BB1-CTD 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston XF875V-HYA 8GB

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Samsung M378B5173BH0-CH9 4GB

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AMD AE34G1601U1 4GB

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Patriot Memory (PDP Systems) PSD416G32002 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

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G Skill Intl F4-3200C16-16GTZR 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB