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Kingston 9905403-061.A00LF 2GB
Samsung M392A4K40BM0-CRC 32GB

Kingston 9905403-061.A00LF 2GB vs Samsung M392A4K40BM0-CRC 32GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Samsung M392A4K40BM0-CRC 32GB 需要考虑的原因
Samsung M392A4K40BM0-CRC 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 57
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    10.8 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Samsung M392A4K40BM0-CRC 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 32
  • 读取速度，GB/s
    6.8 left arrow 10.8
  • 写入速度，GB/s
    5.5 left arrow 9.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 2618

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Samsung M392A4K40BM0-CRC 32GB RAM的比较

A-DATA Technology DOVF1B163G2G 2GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9905403-061.A00LF 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T5663RZ3-CF7 2GB
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G Skill Intl F4-3200C14-8GTRG 8GB
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