Kingston 9905403-090.A01LF 4GB vs Corsair CMK64GX4M2D3600C18 32GB

总分

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB

差异规格评论

差异

Kingston 9905403-090.A01LF 4GB

需要考虑的原因
Kingston 9905403-090.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Corsair CMK64GX4M2D3600C18 32GB

需要考虑的原因
Corsair CMK64GX4M2D3600C18 32GB

报告一个错误

更快的读取速度，GB/s

17.6 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-090.A01LF 4GB

Corsair CMK64GX4M2D3600C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.9 17.6
写入速度，GB/s

8.9 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2418 3686

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Mushkin 991679ES 996679ES 2GB

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Corsair CMK16GX4M1C3000C16 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB