Kingston 9905403-134.A00LF 2GB vs SK Hynix GKE160SO102408-2400 16GB

总分

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

总分

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

差异规格评论

差异

Kingston 9905403-134.A00LF 2GB

需要考虑的原因
Kingston 9905403-134.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 27% 更低的延时
更快的读取速度，GB/s

15.5 15.1

测试中的平均数值

SK Hynix GKE160SO102408-2400 16GB

需要考虑的原因
SK Hynix GKE160SO102408-2400 16GB

报告一个错误

更快的写入速度，GB/s

9.8 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-134.A00LF 2GB

SK Hynix GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 33
读取速度，GB/s

15.5 15.1
写入速度，GB/s

9.3 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2402 2590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB

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Kingston KHX318C10FR/8G 8GB

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Corsair CMD16GX4M4B2133C10 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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EVGA 16G-D3-1600-MR 8GB

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Corsair CMK128GX4M8Z2933C16 16GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB