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Kingston 9905403-134.A00LF 2GB
Transcend Information TS512MSH64V4H 4GB

Kingston 9905403-134.A00LF 2GB vs Transcend Information TS512MSH64V4H 4GB

总分
star star star star star
Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

总分
star star star star star
Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异 规格 评论

差异

Kingston 9905403-134.A00LF 2GB 需要考虑的原因
Kingston 9905403-134.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 45
    左右 47% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 5.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 8.4
    测试中的平均数值
Transcend Information TS512MSH64V4H 4GB 需要考虑的原因
Transcend Information TS512MSH64V4H 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-134.A00LF 2GB
Transcend Information TS512MSH64V4H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 45
  • 读取速度，GB/s
    15.5 left arrow 5.3
  • 写入速度，GB/s
    9.3 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2402 left arrow 1535

Kingston 9905403-134.A00LF 2GB RAM的比较

Kingston Kingston2GB800 2GB
Team Group Inc. TEAMGROUP-D4-3866 4GB

Transcend Information TS512MSH64V4H 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
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内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Samsung M378A5244CB0-CTD 4GB
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Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
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Kingston 99U5584-001.A00LF 4GB
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Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Samsung M471A2K43CB1-CRC 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Apacer Technology 78.C2GF6.AU20B 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
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G Skill Intl F4-2400C17-16GSXF 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Essencore Limited KD48GU481-26N1600 8GB
Essencore Limited KD48GU481-26N1600 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM