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Kingston 9905403-156.A00LF 2GB
A-DATA Technology DDR4 3600 2OZ 8GB

Kingston 9905403-156.A00LF 2GB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 25
    左右 28% 更低的延时
A-DATA Technology DDR4 3600 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19 left arrow 17.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 25
  • 读取速度，GB/s
    17.7 left arrow 19.0
  • 写入速度，GB/s
    13.1 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 3683

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

A-DATA Technology DDR4 3600 2OZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905471-002.A00LF 2GB
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内存RAM
A-DATA Technology DQVE1908 512MB
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Corsair CMT32GX4M4C3200C14 8GB
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内存RAM
Kingston 99U5469-045.A00LF 4GB
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内存RAM
Nanya Technology M2F8G64CB8HB5N-DI 8GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
V-GEN D4H8GL32A8TS 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Kingston 9905712-048.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
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Corsair CMK8GX4M1A2400C14 8GB
内存RAM