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Kingston 9905403-156.A00LF 2GB
Corsair CM4X4GD3000C16K2 4GB

Kingston 9905403-156.A00LF 2GB vs Corsair CM4X4GD3000C16K2 4GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
Corsair CM4X4GD3000C16K2 4GB

Corsair CM4X4GD3000C16K2 4GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 19
    左右 5% 更低的延时
Corsair CM4X4GD3000C16K2 4GB 需要考虑的原因
Corsair CM4X4GD3000C16K2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    19.6 left arrow 17.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Corsair CM4X4GD3000C16K2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 19
  • 读取速度，GB/s
    17.7 left arrow 19.6
  • 写入速度，GB/s
    13.1 left arrow 16.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 3165

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

Corsair CM4X4GD3000C16K2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9905403-156.A00LF 2GB
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内存RAM
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内存RAM
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G Skill Intl F4-3200C16-16GFX 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Neo Forza NMUD416E82-3600 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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G Skill Intl F4-3200C16-16GTZR 16GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM