Kingston 9905403-156.A00LF 2GB vs Crucial Technology CT8G4SFS8213.M8FB 8GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 34

左右 47% 更低的延时
更快的读取速度，GB/s

17.7 14

测试中的平均数值
更快的写入速度，GB/s

13.1 10.4

测试中的平均数值

Crucial Technology CT8G4SFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FB 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 34
读取速度，GB/s

17.7 14.0
写入速度，GB/s

13.1 10.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 2616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5273DH0-CH9 4GB

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Kingston 9965525-018.A00LF 4GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

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Samsung M378A5143TB2-CTD 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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Kingston 9905403-090.A01LF 4GB

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Peak Electronics 256X64M-67E 2GB

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Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMU32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3333C16 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB