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Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.BAGN8.40C0B 4GB

Peak Electronics 256X64M-67E 2GB vs Apacer Technology 78.BAGN8.40C0B 4GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 50
    左右 22% 更低的延时
Apacer Technology 78.BAGN8.40C0B 4GB 需要考虑的原因
Apacer Technology 78.BAGN8.40C0B 4GB
报告一个错误
  • 更快的读取速度，GB/s
    9.6 left arrow 5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 50
  • 读取速度，GB/s
    5,022.9 left arrow 9.6
  • 写入速度，GB/s
    1,597.0 left arrow 8.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    753 left arrow 2111

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Apacer Technology 78.BAGN8.40C0B 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
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AMD R5316G1609U2K 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
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Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
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A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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Samsung V-GeN D4S4GL32A8TL 4GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Crucial Technology BL32G36C16U4BL.M16FB 32GB
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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
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内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
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Kingston KST-2133MHZ-4G 4GB
内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Crucial Technology CT16G4DFD824A.C16FBR 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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Essencore Limited KD48GS88J-26N1900 8GB
内存RAM
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Hynix Semiconductor (Hyundai Electronics) HMT35151BFR8C
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965662-019.A00G 32GB
Kingston 9965662-019.A00G 32GB
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