Kingston 9905403-156.A00LF 2GB vs G Skill Intl F4-3200C16-16GTZA 16GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 33

左右 45% 更低的延时

G Skill Intl F4-3200C16-16GTZA 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZA 16GB

报告一个错误

更快的读取速度，GB/s

18.3 17.7

测试中的平均数值
更快的写入速度，GB/s

15.9 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3200C16-16GTZA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 33
读取速度，GB/s

17.7 18.3
写入速度，GB/s

13.1 15.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 3574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMW32GX4M4C3000C15 8GB

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Kingston 9905403-011.A03LF 2GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston KGTWW1-MIE 4GB

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Crucial Technology BLS8G4D240FSEK.8FBR 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-2400C17-8GDBVR 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB