Kingston 9905403-156.A00LF 2GB vs G Skill Intl F4-3200C16-4GVRB 4GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 33% 更低的延时

G Skill Intl F4-3200C16-4GVRB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVRB 4GB

报告一个错误

更快的读取速度，GB/s

18.5 17.7

测试中的平均数值
更快的写入速度，GB/s

13.7 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3200C16-4GVRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 27
读取速度，GB/s

17.7 18.5
写入速度，GB/s

13.1 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CH9 4GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CMK32GX4M4B3866C18 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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Kingston 9905403-156.A00LF 2GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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Crucial Technology CT8G4DFD824A.C16FDD2 8GB

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Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair CM4X16GE2666C18S4 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology CT16G4SFS832A.M8FE 16GB

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Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB