Kingston 9905403-156.A00LF 2GB vs G Skill Intl F4-3866C18-16GTZR 16GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 34

左右 47% 更低的延时
更快的读取速度，GB/s

17.7 17.5

测试中的平均数值

G Skill Intl F4-3866C18-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB

报告一个错误

更快的写入速度，GB/s

17.0 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3866C18-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 34
读取速度，GB/s

17.7 17.5
写入速度，GB/s

13.1 17.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 3697

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X8GD3000C16K4 8GB

Corsair CM4X8GD3000C16K4 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingston 9965640-016.A00G 32GB

Kingston 9965640-016.A00G 32GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Essencore Limited KD44GU480-26N160T 4GB

Essencore Limited KD44GU480-26N160T 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston 9905678-005.A00G 8GB

Kingston 9905678-005.A00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMT64GX4M2C3600C18 32GB

Corsair CMT64GX4M2C3600C18 32GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingston 9965745-002.A00G 16GB

Kingston 9965745-002.A00G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB