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Kingston 9905403-156.A00LF 2GB
INTENSO 5641162 8GB

Kingston 9905403-156.A00LF 2GB vs INTENSO 5641162 8GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
INTENSO 5641162 8GB

INTENSO 5641162 8GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 23
    左右 22% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 11.7
    测试中的平均数值
INTENSO 5641162 8GB 需要考虑的原因
INTENSO 5641162 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
INTENSO 5641162 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 23
  • 读取速度，GB/s
    17.7 left arrow 16.2
  • 写入速度，GB/s
    13.1 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 2799

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

INTENSO 5641162 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
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Kingston 9905704-007.A00G 4GB
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Mushkin 991586 2GB
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G Skill Intl F3-2133C9-4GAB 4GB
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INTENSO 5641162 8GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905403-515.A00LF 8GB
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G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Kingston 9905471-002.A00LF 2GB
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