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Kingston 9905403-156.A00LF 2GB
ISD Technology Limited IMT451U6MFR8Y-AB1 4GB

Kingston 9905403-156.A00LF 2GB vs ISD Technology Limited IMT451U6MFR8Y-AB1 4GB

总分
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分
star star star star star
ISD Technology Limited IMT451U6MFR8Y-AB1 4GB

ISD Technology Limited IMT451U6MFR8Y-AB1 4GB

差异 规格 评论

差异

Kingston 9905403-156.A00LF 2GB 需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 20
    左右 10% 更低的延时
  • 更快的写入速度，GB/s
    13.1 left arrow 11.6
    测试中的平均数值
ISD Technology Limited IMT451U6MFR8Y-AB1 4GB 需要考虑的原因
ISD Technology Limited IMT451U6MFR8Y-AB1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 17.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
ISD Technology Limited IMT451U6MFR8Y-AB1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    18 left arrow 20
  • 读取速度，GB/s
    17.7 left arrow 18.3
  • 写入速度，GB/s
    13.1 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2926 left arrow 2638

Kingston 9905403-156.A00LF 2GB RAM的比较

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

ISD Technology Limited IMT451U6MFR8Y-AB1 4GB RAM的比较

Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM