Kingston 9905403-156.A00LF 2GB vs Kingston 9905743-044.A00G 16GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Kingston 9905743-044.A00G 16GB

Kingston 9905743-044.A00G 16GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 39

左右 54% 更低的延时
更快的读取速度，GB/s

17.7 15.3

测试中的平均数值

Kingston 9905743-044.A00G 16GB

需要考虑的原因
Kingston 9905743-044.A00G 16GB

报告一个错误

更快的写入速度，GB/s

13.7 13.1

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Kingston 9905743-044.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 39
读取速度，GB/s

17.7 15.3
写入速度，GB/s

13.1 13.7
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2926 3329

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M471A1K43CB1-CTD 8GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3866C18-8GTZ 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Kingston 9965525-140.A00LF 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

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G Skill Intl F4-3333C16-8GVR 8GB