Kingston 9905403-437.A01LF 4GB vs Samsung T471A1K43CB1-CRC 8GB

总分

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

总分

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

差异规格评论

差异

Kingston 9905403-437.A01LF 4GB

需要考虑的原因
Kingston 9905403-437.A01LF 4GB

报告一个错误

更快的写入速度，GB/s

8.6 6.5

测试中的平均数值

Samsung T471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung T471A1K43CB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 -63% 更低的延时
更快的读取速度，GB/s

13.8 13

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-437.A01LF 4GB

Samsung T471A1K43CB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 24
读取速度，GB/s

13.0 13.8
写入速度，GB/s

8.6 6.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2201 1983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston KF552C40-16 16GB

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A-DATA Technology DDR4 3600 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Samsung M378A1K43BB1-CPB 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905630-030.A00G 16GB

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Kingston KF560C40-16 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

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G Skill Intl F3-1866C8-8GTX 8GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB