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Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
比较
Kingston 9905403-444.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
总分
Kingston 9905403-444.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
36
左右 3% 更低的延时
更快的读取速度,GB/s
11.5
9.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
更快的写入速度,GB/s
7.0
6.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
36
读取速度,GB/s
11.5
9.3
写入速度,GB/s
6.5
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1994
1891
Kingston 9905403-444.A00LF 4GB RAM的比较
Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Apacer Technology GD2.1140CH.001 4GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
报告一个错误
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Bug description
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