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Kingston 9905403-444.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB

Kingston 9905403-444.A00LF 4GB vs Micron Technology 36ASF2G72PZ-2G3A3 16GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 37
    左右 5% 更低的延时
  • 更快的读取速度，GB/s
    11.5 left arrow 9.8
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G3A3 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G3A3 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.9 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 37
  • 读取速度，GB/s
    11.5 left arrow 9.8
  • 写入速度，GB/s
    6.5 left arrow 7.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 2229

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9965589-035.D00G 16GB
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Kingston 9905713-001.A00G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
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AMD R538G1601U2S-UO 8GB
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内存RAM
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Samsung M471A1G44AB0-CWE 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Apacer Technology D12.2324WT.001 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM