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Lexar Co Limited LD4AU016G-H3200GST 16GB
Avant Technology J644GU44J2320NF 32GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Avant Technology J644GU44J2320NF 32GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Avant Technology J644GU44J2320NF 32GB

Avant Technology J644GU44J2320NF 32GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 17
    测试中的平均数值
Avant Technology J644GU44J2320NF 32GB 需要考虑的原因
Avant Technology J644GU44J2320NF 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 33
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    15.2 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Avant Technology J644GU44J2320NF 32GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 32
  • 读取速度，GB/s
    17.8 left arrow 17.0
  • 写入速度，GB/s
    12.5 left arrow 15.2
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 3491

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Avant Technology J644GU44J2320NF 32GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
Samsung M471B1G73EB0-YK0 8GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
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内存RAM
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takeMS International AG TMS2GB264D083805EV 2GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Corsair CMK32GX4M1A2400C16 32GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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Samsung M378B5773CH0-CH9 2GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
内存RAM