Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS8G4D240FSC.16FARG 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Crucial Technology BLS8G4D240FSC.16FARG 8GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.7

测试中的平均数值

Crucial Technology BLS8G4D240FSC.16FARG 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSC.16FARG 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 16.3
写入速度，GB/s

2,622.0 11.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK8GX4M2C3000C16 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Corsair CML8GX3M2A1866C9 4GB

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Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-4266C19-8GTRG 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Essencore Limited KD4AGU880-34A170X 16GB

Essencore Limited KD4AGU880-34A170X 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMH32GX4M2Z3600C18 16GB

Corsair CMH32GX4M2Z3600C18 16GB

Kingston KHX1600C9D3L/4GX 4GB

Kingston KHX1600C9D3L/4GX 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB