Kingston 9905403-447.A00LF 4GB vs Panram International Corporation D4N2666PS-16G 16GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

Panram International Corporation D4N2666PS-16G 16GB

需要考虑的原因
Panram International Corporation D4N2666PS-16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 -38% 更低的延时
更快的读取速度，GB/s

17.2 13.7

测试中的平均数值
更快的写入速度，GB/s

15.4 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Panram International Corporation D4N2666PS-16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 26
读取速度，GB/s

13.7 17.2
写入速度，GB/s

8.2 15.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3617

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851S6CJR6N-XN 4GB

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Kingston 99U5403-468.A00LF 8GB

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Crucial Technology CT16G4SFD824A.M16FB 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB