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PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS6266.M4FB 8GB

PNY Electronics PNY 2GB vs Crucial Technology CT8G4DFS6266.M4FB 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Crucial Technology CT8G4DFS6266.M4FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFS6266.M4FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.1 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.8 left arrow 15.1
  • 写入速度，GB/s
    8.4 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2750

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Crucial Technology CT8G4DFS6266.M4FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-2400C15-8GVS 8GB
G Skill Intl F4-2400C15-8GVS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMK64GX4M8Z2933C16 8GB
Corsair CMK64GX4M8Z2933C16 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965640-008.A01G 32GB
Kingston 9965640-008.A01G 32GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3200C14-16GTZ 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
内存RAM