Kingston 9905403-447.A00LF 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

18.1 13.7

测试中的平均数值
更快的写入速度，GB/s

15.0 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

13.7 18.1
写入速度，GB/s

8.2 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMW16GX4M2C3000C15 8GB

Corsair CMW16GX4M2C3000C15 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB