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Kingston 9905403-447.A00LF 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingston 9905403-447.A00LF 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分
star star star star star
Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分
star star star star star
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异 规格 评论

差异

Kingston 9905403-447.A00LF 4GB 需要考虑的原因
Kingston 9905403-447.A00LF 4GB
报告一个错误
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 36
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-447.A00LF 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 23
  • 读取速度，GB/s
    13.7 left arrow 18.1
  • 写入速度，GB/s
    8.2 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3317

Kingston 9905403-447.A00LF 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-467.A00LF 8GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Super Talent F24SB8GH 8GB
Super Talent F24SB8GH 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2800C17-8GIS 8GB
G Skill Intl F4-2800C17-8GIS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM