Kingston 9905458-017.A01LF 4GB vs Golden Empire CL17-17-17 D4-2400 16GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Golden Empire CL17-17-17 D4-2400 16GB

需要考虑的原因
Golden Empire CL17-17-17 D4-2400 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

Golden Empire CL17-17-17 D4-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

12.8 16.5
写入速度，GB/s

8.6 11.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2239 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Gloway International (HK) STKD4XMP2400-F 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMU32GX4M2C3000C16 16GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Samsung M471B5773DH0-CK0 2GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Corsair CMT32GX4M2C3600C18 16GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB