Kingston 9905469-124.A00LF 4GB vs Samsung M378A1K43BB2-CTD 8GB

总分

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

总分

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

差异规格评论

差异

Kingston 9905469-124.A00LF 4GB

需要考虑的原因
Kingston 9905469-124.A00LF 4GB

报告一个错误

Samsung M378A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43BB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 44

左右 -110% 更低的延时
更快的读取速度，GB/s

17.9 11.2

测试中的平均数值
更快的写入速度，GB/s

13.8 5.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-124.A00LF 4GB

Samsung M378A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 21
读取速度，GB/s

11.2 17.9
写入速度，GB/s

5.7 13.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1572 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P24HC8T1-BSFS 8GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT102464BF160B.C16 8GB

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G Skill Intl F4-2666C18-8GFT 8GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston XK2M26-MIE 16GB

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InnoDisk Corporation M4S0-8GSSOCIK 8GB

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