Kingston 9905469-143.A00LF 4GB vs G Skill Intl F4-2666C18-16GRS 16GB

总分

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

总分

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

差异规格评论

差异

Kingston 9905469-143.A00LF 4GB

需要考虑的原因
Kingston 9905469-143.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

G Skill Intl F4-2666C18-16GRS 16GB

需要考虑的原因
G Skill Intl F4-2666C18-16GRS 16GB

报告一个错误

更快的读取速度，GB/s

16.5 13.2

测试中的平均数值
更快的写入速度，GB/s

13.5 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-2666C18-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.2 16.5
写入速度，GB/s

8.4 13.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2163 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M3 78T2863QZS-CF7 1GB

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Apacer Technology 78.CAGR4.40C0B 8GB

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SK Hynix HMT325U6BFR8C-H9 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Kingston 9905403-156.A00LF 2GB

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Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

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Samsung M471A5143SB1-CRC 4GB

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Corsair CM4X8GF2133C13K4 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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