Kingston 9905469-143.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Kingston 9905469-143.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

总分

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

差异规格评论

差异

Kingston 9905469-143.A00LF 4GB

需要考虑的原因
Kingston 9905469-143.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时
更快的读取速度，GB/s

13.2 12.2

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

报告一个错误

更快的写入速度，GB/s

9.6 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-143.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.2 12.2
写入速度，GB/s

8.4 9.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2163 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Corsair CMW16GX4M2Z3200C16 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMD8GX4M2B3466C18 4GB

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Corsair VS1GB800D2 1GB

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Kingston ACR26D4U9D8MH-16 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Corsair CMT16GX4M2K4266C19 8GB

Corsair CMT16GX4M2K4266C19 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CMSX8GX4M2A2666C18 4GB

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