Kingston 9905471-001.A01LF 2GB vs Corsair CM4X8GD3000C16K4D 8GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Corsair CM4X8GD3000C16K4D 8GB

需要考虑的原因
Corsair CM4X8GD3000C16K4D 8GB

报告一个错误

更快的读取速度，GB/s

17.1 12.8

测试中的平均数值
更快的写入速度，GB/s

13.0 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

Corsair CM4X8GD3000C16K4D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

12.8 17.1
写入速度，GB/s

8.3 13.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1896 3221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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PUSKILL DDR3 1600 8G 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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SK Hynix HMA851U6CJR6N-UH 4GB

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Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-3200C16-8GVS 8GB

G Skill Intl F4-3200C16-8GVS 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB