Kingston 9905471-002.A00LF 2GB vs Corsair CMK128GX4M8B3000C16 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Corsair CMK128GX4M8B3000C16 16GB

需要考虑的原因
Corsair CMK128GX4M8B3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 73

左右 -83% 更低的延时
更快的读取速度，GB/s

13.4 6.1

测试中的平均数值
更快的写入速度，GB/s

11.9 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Corsair CMK128GX4M8B3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 40
读取速度，GB/s

6.1 13.4
写入速度，GB/s

4.7 11.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 3014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung V-GeN D4S8GL26A8TL5 8GB

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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Kingston 99U5584-010.A00LF 4GB

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Corsair CMR32GX4M4C3600C18 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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G Skill Intl F4-3200C15-16GTZR 16GB

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Kingston 9905474-019.A00LF 2GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Kingston HP26D4U9S8ME-8X 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-3300C16-8GTZSW 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB