Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 8ATF1G64AZ-2G3H1 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G3H1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

10.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

2,909.8 14.9
写入速度，GB/s

1,519.2 10.5
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2589

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMK32GX4M2A2800C16 16GB

Corsair CMK32GX4M2A2800C16 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Apacer Technology GD2.1542WS.003 8GB

Apacer Technology GD2.1542WS.003 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Corsair CMZ8GX3M2A2133C11 4GB

Corsair CMZ8GX3M2A2133C11 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3000C16-8GVSB 8GB

G Skill Intl F4-3000C16-8GVSB 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB