Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-3200C16-8GSX 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

G Skill Intl F4-3200C16-8GSX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSX 8GB

报告一个错误

低于PassMark测试中的延时，ns

55 73

左右 -33% 更低的延时
更快的读取速度，GB/s

19.5 6.1

测试中的平均数值
更快的写入速度，GB/s

8.8 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C16-8GSX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 55
读取速度，GB/s

6.1 19.5
写入速度，GB/s

4.7 8.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 2274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112S64CP6-S6 1GB

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A-DATA Technology VDQVE1B16 2GB

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PNY Electronics PNY 2GB

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Kingston KHX2400C15/8G 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BL32G32C16S4B.M16FB1 32GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB