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Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
比较
Kingston 9905471-002.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
总分
Kingston 9905471-002.A00LF 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
更快的写入速度,GB/s
4.7
2.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
报告一个错误
低于PassMark测试中的延时,ns
60
73
左右 -22% 更低的延时
更快的读取速度,GB/s
7.8
6.1
测试中的平均数值
更高的内存带宽,mbps
17000
8500
左右 2 更高的带宽
规格
完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
73
60
读取速度,GB/s
6.1
7.8
写入速度,GB/s
4.7
2.8
内存带宽,mbps
8500
17000
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1021
1505
Kingston 9905471-002.A00LF 2GB RAM的比较
Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M3 93T5750CZA-CE6 2GB
Samsung M391A1G43EB1-CRC 8GB
PNY Electronics PNY 2GB
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Crucial Technology CT25664BA1339.M8FK 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
A-DATA Technology AD73I1B1672EG 2GB
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Apacer Technology 78.01G86.9H50C 1GB
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Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C10 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
报告一个错误
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Bug description
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