Kingston 9905471-002.A00LF 2GB vs Kingston 9965589-030.D01G 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Kingston 9965589-030.D01G 8GB

需要考虑的原因
Kingston 9965589-030.D01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 73

左右 -128% 更低的延时
更快的读取速度，GB/s

9.9 6.1

测试中的平均数值
更快的写入速度，GB/s

8.9 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Kingston 9965589-030.D01G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 32
读取速度，GB/s

6.1 9.9
写入速度，GB/s

4.7 8.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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A-DATA Technology ADOVE1A0834E 1GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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King Tiger Technology Tigo-2400MHz-4G 4GB

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Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-2400C17-4GFX 4GB

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Samsung M378B5673EH1-CF8 2GB

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Avant Technology J641GU42J7240N3 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Wilk Elektronik S.A. GY2400D464L15/8G 8GB

Wilk Elektronik S.A. GY2400D464L15/8G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

SK Hynix DDR2 800 2G 2GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB