Kingston 9905471-006.A01LF 4GB vs G Skill Intl F4-4266C19-8GTZR 8GB

总分

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

总分

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

差异规格评论

差异

Kingston 9905471-006.A01LF 4GB

需要考虑的原因
Kingston 9905471-006.A01LF 4GB

报告一个错误

G Skill Intl F4-4266C19-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 -37% 更低的延时
更快的读取速度，GB/s

19.4 12

测试中的平均数值
更快的写入速度，GB/s

16.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A01LF 4GB

G Skill Intl F4-4266C19-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 27
读取速度，GB/s

12.0 19.4
写入速度，GB/s

7.5 16.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Corsair CMY16GX3M4A2133C8 4GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Kingston 9905471-006.A01LF 4GB

G Skill Intl F4-4266C19-8GTZR 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology CT4G4DFS8213.M8FA 4GB

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PNY Electronics PNY 2GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

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Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB