Kingston 9905702-010.A00G 8GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB

总分

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

总分

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

差异规格评论

差异

Kingston 9905702-010.A00G 8GB

需要考虑的原因
Kingston 9905702-010.A00G 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Micron Technology 8ATF51264AZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 -3% 更低的延时
更快的读取速度，GB/s

15.8 15.6

测试中的平均数值
更快的写入速度，GB/s

11.8 11.1

测试中的平均数值

规格

完整的技术规格清单

Kingston 9905702-010.A00G 8GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

30 29
读取速度，GB/s

15.6 15.8
写入速度，GB/s

11.1 11.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2792 2711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Apacer Technology 78.CAGPL.ARC0B 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Corsair CMK16GX4M4B3600C18 4GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Apacer Technology 78.CAGMR.ARC0B 8GB

Apacer Technology 78.CAGMR.ARC0B 8GB

Samsung M3 78T2863QZS-CF7 1GB

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