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Kingston 9905702-010.A00G 8GB
Samsung M393A2K40BB2-CTD 16GB

Kingston 9905702-010.A00G 8GB vs Samsung M393A2K40BB2-CTD 16GB

总分
star star star star star
Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

总分
star star star star star
Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

差异 规格 评论

差异

Kingston 9905702-010.A00G 8GB 需要考虑的原因
Kingston 9905702-010.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 65
    左右 54% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 8.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 5.8
    测试中的平均数值
Samsung M393A2K40BB2-CTD 16GB 需要考虑的原因
Samsung M393A2K40BB2-CTD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Kingston 9905702-010.A00G 8GB
Samsung M393A2K40BB2-CTD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 65
  • 读取速度，GB/s
    15.6 left arrow 8.5
  • 写入速度，GB/s
    11.1 left arrow 5.8
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2792 left arrow 1981

Kingston 9905702-010.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2K40BB2-CTD 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Kingston 9905702-010.A00G 8GB
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内存RAM
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内存RAM
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内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Corsair CMU16GX4M2D3200C16 8GB
内存RAM
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内存RAM
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内存RAM
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Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM