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Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB

Kingston 9965433-034.A00LF 4GB vs G Skill Intl F4-3200C16-16GTZKY 16GB

总分
star star star star star
Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

差异 规格 评论

差异

Kingston 9965433-034.A00LF 4GB 需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
G Skill Intl F4-3200C16-16GTZKY 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKY 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 42
    左右 -133% 更低的延时
  • 更快的读取速度，GB/s
    20.7 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 18
  • 读取速度，GB/s
    6.4 left arrow 20.7
  • 写入速度，GB/s
    6.7 left arrow 16.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1632 left arrow 3722

Kingston 9965433-034.A00LF 4GB RAM的比较

Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
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Kingston 9905734-018.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-2666C19-16GIS 16GB
G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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G Skill Intl F4-2400C17-8GISM 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
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PNY Electronics PNY 2GB
G Skill Intl F4-4400C19-16GVK 16GB
G Skill Intl F4-4400C19-16GVK 16GB
内存RAM
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A-DATA Technology DQKD1A08 1GB
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Crucial Technology BL16G30C15U4W.M16FE1 16GB
内存RAM
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Kingston 9905403-134.A00LF 2GB
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Transcend Information TS2GLH64V1B 16GB
内存RAM
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Kingston 9905403-134.A00LF 2GB
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Kingston KHX2133C14/16G 16GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM