PNY Electronics PNY 2GB vs G Skill Intl F4-4400C19-16GVK 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-4400C19-16GVK 16GB

G Skill Intl F4-4400C19-16GVK 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

G Skill Intl F4-4400C19-16GVK 16GB

需要考虑的原因
G Skill Intl F4-4400C19-16GVK 16GB

报告一个错误

更快的读取速度，GB/s

20.5 13.8

测试中的平均数值
更快的写入速度，GB/s

15.5 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-4400C19-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

13.8 20.5
写入速度，GB/s

8.4 15.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Team-Elite-1333 4GB

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Corsair CMU32GX4M2D3200C16 16GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

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Kingston K1N7HK-ELC 2GB

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Kingston KF2666C16S4/16G 16GB