Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 4ATF51264AZ-2G6E1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 29% 更低的延时
更快的写入速度，GB/s

12.5 12.1

测试中的平均数值

Micron Technology 4ATF51264AZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G6E1 4GB

报告一个错误

更快的读取速度，GB/s

16.4 16

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 34
读取速度，GB/s

16.0 16.4
写入速度，GB/s

12.5 12.1
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 2616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMW32GX4M2C3000C15 16GB

Corsair CMW32GX4M2C3000C15 16GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMT128GX4M8X3600C18 16GB

Corsair CMT128GX4M8X3600C18 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB