RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 4ATF51264AZ-2G6E1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 4ATF51264AZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
34
Around 29% lower latency
Faster write speed, GB/s
12.5
12.1
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-2G6E1 4GB
Report a bug
Faster reading speed, GB/s
16.4
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
34
Read speed, GB/s
16.0
16.4
Write speed, GB/s
12.5
12.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2616
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 4ATF51264AZ-2G6E1 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-022.A00LF 2GB
Corsair CMWX16GC3200C16W4 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Kingston 9905403-090.A01LF 4GB
Kingston X74R9W-MIE 8GB
Mushkin 996902 2GB
Kingston XG9XKG-MIE 16GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMW16GX4M1D3000C16 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMD16GX4M4B3000C14 4GB
Kingston KF552C40-16 16GB
Kllisre 0000 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2400C17-8GVR 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-2400C15-8GTZR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905711-002.A00G 4GB
Corsair CMX4GX3M2A1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Report a bug
×
Bug description
Source link