Kingston 9965525-018.A00LF 4GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Golden Empire CL16-18-18 D4-3200 8GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.2

测试中的平均数值
更快的写入速度，GB/s

14.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Golden Empire CL16-18-18 D4-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.2 18.2
写入速度，GB/s

8.6 14.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2196 3463

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Samsung M386A2G40DB0-CPB 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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