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Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB

Kingston 9965525-018.A00LF 4GB vs Micron Technology 16ATF1G64AZ-2G3A2 8GB

总分
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分
star star star star star
Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

差异 规格 评论

差异

Kingston 9965525-018.A00LF 4GB 需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
Micron Technology 16ATF1G64AZ-2G3A2 8GB 需要考虑的原因
Micron Technology 16ATF1G64AZ-2G3A2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 24
  • 读取速度，GB/s
    13.2 left arrow 15.5
  • 写入速度，GB/s
    8.6 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2509

Kingston 9965525-018.A00LF 4GB RAM的比较

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M471A1G43DB0-CPB 8GB
Samsung M471A1G43DB0-CPB 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD128GX4M8A2400C14 16GB
Corsair CMD128GX4M8A2400C14 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
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Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F4-3466C16-4GVK 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M393A5143DB0-CPB 4GB
Samsung M393A5143DB0-CPB 4GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD16GX4M4B3200C16-R 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Transcend Information JM3200HLE-32GK 16GB
Transcend Information JM3200HLE-32GK 16GB
内存RAM