Samsung M471B1G73EB0-YK0 8GB vs Crucial Technology CT4G4DFS8266.C8FE 4GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 47

左右 2% 更低的延时

Crucial Technology CT4G4DFS8266.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FE 4GB

报告一个错误

更快的读取速度，GB/s

14 12.2

测试中的平均数值
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 47
读取速度，GB/s

12.2 14.0
写入速度，GB/s

7.9 8.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2072 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Transcend Information TS2GLH64V4B 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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