Kingston 9965525-018.A00LF 4GB vs Samsung M393A1K43BB1-CTD 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 61

左右 56% 更低的延时
更快的读取速度，GB/s

13.2 8.2

测试中的平均数值
更快的写入速度，GB/s

8.6 6.4

测试中的平均数值

Samsung M393A1K43BB1-CTD 8GB

需要考虑的原因
Samsung M393A1K43BB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Samsung M393A1K43BB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 61
读取速度，GB/s

13.2 8.2
写入速度，GB/s

8.6 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2196 1813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9965516-112.A00LF 16GB

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Crucial Technology CT8G4DFD8213.C16FBR2 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M393A1K43BB1-CTD 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

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Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB