Kingston 9965525-018.A00LF 4GB vs Samsung M471A2K43DB1-CWE 16GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时

Samsung M471A2K43DB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB

报告一个错误

更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更快的写入速度，GB/s

13.5 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Samsung M471A2K43DB1-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

13.2 15.8
写入速度，GB/s

8.6 13.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2196 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2K4266C19 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-3200C14-16GTRS 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 99U5704-001.A00G 4GB

Kingston 99U5704-001.A00G 4GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Kingston 9905701-008.A00G 16GB

Kingston 9905701-008.A00G 16GB