Kingston 9965525-058.A00LF 8GB vs Samsung M393A1G40EB1-CPB 8GB

总分

Kingston 9965525-058.A00LF 8GB

Kingston 9965525-058.A00LF 8GB

总分

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

差异规格评论

差异

Kingston 9965525-058.A00LF 8GB

需要考虑的原因
Kingston 9965525-058.A00LF 8GB

报告一个错误

Samsung M393A1G40EB1-CPB 8GB

需要考虑的原因
Samsung M393A1G40EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 82

左右 -78% 更低的延时
更快的读取速度，GB/s

11 5.2

测试中的平均数值
更快的写入速度，GB/s

8.7 2.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-058.A00LF 8GB

Samsung M393A1G40EB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

82 46
读取速度，GB/s

5.2 11.0
写入速度，GB/s

2.8 8.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

895 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-058.A00LF 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology 4ATF1G64AZ-3G2B1 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

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Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMK8GX4M1D2666C16 8GB