Kingston 9965525-140.A00LF 8GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

总分

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异规格评论

差异

Kingston 9965525-140.A00LF 8GB

需要考虑的原因
Kingston 9965525-140.A00LF 8GB

报告一个错误

G Skill Intl F4-3466C18-8GTZRXB 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 30

左右 -76% 更低的延时
更快的读取速度，GB/s

20.9 9.8

测试中的平均数值
更快的写入速度，GB/s

16.0 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 17
读取速度，GB/s

9.8 20.9
写入速度，GB/s

6.4 16.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1927 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB