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Kingston 9965525-140.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
比较
Kingston 9965525-140.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
总分
Kingston 9965525-140.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965525-140.A00LF 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 -3% 更低的延时
更快的读取速度,GB/s
13.5
9.8
测试中的平均数值
更快的写入速度,GB/s
10.2
6.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9965525-140.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
29
读取速度,GB/s
9.8
13.5
写入速度,GB/s
6.4
10.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1927
2088
Kingston 9965525-140.A00LF 8GB RAM的比较
Super Talent SUPERTALENT 2GB
SK Hynix HMT351S6CFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Corsair CMD8GX3M2A2933C12 4GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
AMD R5316G1609U2K 8GB
Samsung M474A1G43EB1-CRC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology D12.2326WH.001 16GB
报告一个错误
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Bug description
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