Kingston 9965525-155.A00LF 8GB vs Corsair CMD64GX4M4A2666C15 16GB

总分

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分

Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

差异规格评论

差异

Kingston 9965525-155.A00LF 8GB

需要考虑的原因
Kingston 9965525-155.A00LF 8GB

报告一个错误

Corsair CMD64GX4M4A2666C15 16GB

需要考虑的原因
Corsair CMD64GX4M4A2666C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 69

左右 -68% 更低的延时
更快的读取速度，GB/s

14 6.4

测试中的平均数值
更快的写入速度，GB/s

13.9 3.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-155.A00LF 8GB

Corsair CMD64GX4M4A2666C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 41
读取速度，GB/s

6.4 14.0
写入速度，GB/s

3.7 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1129 3100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Crucial Technology CT16G4SFD8213.M16FB 16GB

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Apacer Technology 78.C1GET.9K10C 8GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Samsung M391A2K43BB1-CPB 16GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Elpida EBJ81UG8BBU5-GN-F 8GB

Elpida EBJ81UG8BBU5-GN-F 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston 9905624-025.A00G 8GB

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A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB