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Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB

Kingston 9965525-155.A00LF 8GB vs Crucial Technology CT16G4SFD8266.C16FE 16GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Crucial Technology CT16G4SFD8266.C16FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 69
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 37
  • 读取速度，GB/s
    6.4 left arrow 14.9
  • 写入速度，GB/s
    3.7 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 2836

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Crucial Technology CT16G4SFD8266.C16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
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Kingston 9965516-112.A00LF 16GB
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Crucial Technology BLS8G4D240FSB.16FARG 8GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
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内存RAM
Kingston K531R8-MIN 4GB
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SK Hynix HMA851S6CJR6N-UH 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
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Kingston 9905700-025.A00G 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
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Crucial Technology BL8G32C16U4RL.M8FE 8GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
内存RAM
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Samsung M4 70T5663QZ3-CF7 2GB
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Samsung M378A2G43MB1-CTD 16GB
内存RAM